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| NTJD2152P Trench Small Signal MOSFET 8 V, Dual P-Channel, SC-88 ESD Protection Features http://onsemi.com V(BR)DSS RDS(on) TYP 0.22 W @ -4.5 V -8 V 0.32 W @ -2.5 V 0.51 W @ -1.8 V -0.775 A ID Max * * * * * * * * * Leading -8 V Trench for Low RDS(ON) Performance ESD Protected Gate Small Footprint (2 x 2 mm) Same Package as SC-70-6 Pb-Free Packages are Available Load Power switching DC-DC Conversion Li-Ion Battery Charging Circuits Cell Phones, Media Players, Digital Cameras, PDAs Applications SOT-363 SC-88 (6 LEADS) S1 Value -8.0 8.0 Unit V V A D2 1 6 D1 MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Based on RqJA) Power Dissipation (Based on RqJA) Continuous Drain Current (Based on RqJL) Power Dissipation (Based on RqJL) Pulsed Drain Current Steady State Steady State Steady State Steady State TA = 25 C TA = 85 C TA = 25 C TA = 85 C TA = 25 C TA = 85 C TA = 25 C TA = 85 C t 10 ms PD IDM TJ, TSTG IS TL ID PD Symbol VDSS VGS ID G1 2 5 G2 -0.775 -0.558 0.27 0.14 -1.1 -0.8 0.55 0.29 1.2 -55 to 150 -0.775 260 3 4 S2 W Top View A MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 1 6 TA M G G 1 S1 G1 D2 TA M G = Device Code = Date Code = Pb-Free Package W SC-88/SOT-363 A CASE 419B STYLE 28 Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C A C (Note: Microdot may be in either location) Symbol RqJA RqJL Typ 400 194 Max 460 226 Unit C/W THERMAL RESISTANCE RATINGS (Note 1) Parameter Junction-to-Ambient - Steady State Junction-to-Lead (Drain) - Steady State ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. (c) Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 3 1 Publication Order Number: NTJD2152/D NTJD2152P ELECTRICAL CHARACTERISTICS (TJ=25C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = -4.5 V, ID = -0.57 A VGS = -2.5 V, ID = -0.48 A VGS = -1.8 V, ID = -0.20 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -4.0 V, ID = -0.5 A, RG = 8.0 W 13 23 50 36 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = -4.5 V, VDS = -5.0 V, ID = -0.6 A VGS = 0 V, f = 1.0 MHz, VDS = -8.0 V 160 38 28 2.2 0.1 0.5 0.5 225 55 40 4.0 nC pF gFS VGS = -4.0 V, ID = -0.57 A VGS = VDS, ID = -250 mA -0.45 -0.83 2.2 0.22 0.32 0.51 2.0 0.3 0.46 0.9 S -1.0 V mV/ C W V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS = 0 V, VDS = -6.4 V VDS = 0 V, VGS = 8.0 V VGS = 0 V, ID = -250 mA -8.0 -10.5 -6.0 1.0 10 V mV/C mA mA Symbol Test Condition Min Typ Max Unit DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR VGS = 0 V, IS = -0.23 A TJ = 25C TJ = 125C 0.76 0.63 78 ns 1.1 V Reverse Recovery Time VGS = 0 V, dIS/dt = 100 A/ms, IS = -0.77 A 2. Pulse Test: pulse width 300ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJD2152P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1.4 -ID, DRAIN CURRENT (AMPS) 1.2 1 0.8 0.6 0.4 0.2 0 0 2 4 6 -1.6 V VGS = -4.5 V to -2.6 V VGS = -2.2 V -2 V TJ = 25C -ID, DRAIN CURRENT (AMPS) -1.8 V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 TJ = 125C 25C TJ = -55C 1.6 0.4 0.8 1.2 2 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.4 VDS -10 V -1.4 V -1.2 V 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 0.5 0.4 0.3 0.2 0.1 0 0 0.2 Figure 2. Transfer Characteristics VGS = -4.5 V VGS = -2.5 V TJ = 125C TJ = 25C TJ = -55C 0.4 0.3 0.2 TJ = 125C TJ = 25C TJ = -55C 0.1 0 0 0.2 0.6 0.8 0.4 1 -ID, DRAIN CURRENT (AMPS) 1.2 1.4 0.6 0.4 0.8 1 -ID, DRAIN CURRENT (AMPS) 1.2 1.4 Figure 3. On-Resistance vs. Drain Current and Temperature 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1 0.8 0.6 -50 ID = -0.7 A VGS = -4.5 V and -2.5 V 300 240 Figure 4. On-Resistance vs. Drain Current and Temperature TJ = 25C VGS = 0 V Ciss C, CAPACITANCE (pF) 180 120 Coss 60 0 -8 Crss -6 -4 -2 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance Variation with Temperature GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6. Capacitance Variation http://onsemi.com 3 NTJD2152P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 4 3 2 1 0 QGS QGD 0.7 -IS, SOURCE CURRENT (AMPS) 0.6 0.5 0.4 0.3 0.2 0.1 0 2.4 0 0.2 0.4 0.6 TJ = 150C TJ = 25C 0.8 1 VGS = 0 V QG(TOT) VGS ID = -0.6 A TJ = 25C 0 0.4 0.8 1.2 1.6 2 Qg, TOTAL GATE CHARGE (nC) -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJD2152P ORDERING INFORMATION Device Order Number NTJD2152PT1 NTJD2152PT1G NTJD2152PT2 NTJD2152PT2G NTJD2152PT4 NTJD2152PT4G Package Type SOT-363 SOT-363 (Pb-Free) SOT-363 SOT-363 (Pb-Free) SOT-363 SOT-363 (Pb-Free) Tape and Reel Size 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTJD2152P PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W D e A3 6 5 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. DIM A A1 A3 b C D E e L HE MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 HE 1 2 3 -E- C b 6 PL 0.2 (0.008) A M L E M STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 A1 SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTJD2152P/D |
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